Electrical switching and noise spectrum of Si-SiO2 interface defects generated by hot electrons
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 142-147
- https://doi.org/10.1016/0169-4332(87)90086-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- On the nature and energy distribution of defect states caused by hot electrons in SiApplied Surface Science, 1987
- Capture and emission kinetics of individual Si:SiO2 interface statesApplied Physics Letters, 1986
- 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Flicker noise in hot electron degraded short channel MOSFETsSolid-State Electronics, 1984
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984