Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition
- 5 March 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (10) , 1382-1384
- https://doi.org/10.1063/1.1352698
Abstract
This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 μm at room temperature. Efficient stacking of dots emitting at 1.3 μm is also demonstrated.Keywords
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