Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

This publication has 13 references indexed in Scilit:

• Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy
  Solid-State Electronics, 1998
• Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy
  Journal of Crystal Growth, 1997
• Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
  Semiconductors, 1997
• Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
  Solid-State Electronics, 1996
• Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer
  Electronics Letters, 1996
• Self-Formed In_0.5Ga_0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm
  Japanese Journal of Applied Physics, 1994
• Low threshold, large T _o injectionlaser emissionfrom (InGa)As quantum dots
  Electronics Letters, 1994
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
  Applied Physics Letters, 1993
• Gain and the threshold of three-dimensional quantum-box lasers
  IEEE Journal of Quantum Electronics, 1986
• Multidimensional quantum well laser and temperature dependence of its threshold current
  Applied Physics Letters, 1982