Evidence for an intrinsic intergap surface state on GaSb(110) by high-resolution angle-resolved photoemission
- 9 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (6) , 610-613
- https://doi.org/10.1103/physrevlett.58.610
Abstract
An intrinsic intergap surface state associated with the occupied dangling-bond state is found on high-quality cleaved, p-type GaSb(110) surfaces. This conclusion is derived from a high precision analysis of angle-resolved photoemission data taken with high energy and momentum resolution as well as high absolute accuracy with synchrotron and He?ize -2 roman I— radiation. Thus GaSb is besides GaP the second exception to the accepted rule that III-V’s do not have such states.Keywords
This publication has 21 references indexed in Scilit:
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976
- Abstract: Empty surface states on semiconductors: Their interactions with metal overlayers and their relation to Schottky barriersJournal of Vacuum Science and Technology, 1976
- GaSb Surfaces States and Schottky-Barrier PinningPhysical Review Letters, 1975
- Work function variations of gallium arsenide cleaved single crystalsSurface Science, 1975
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Temperature- and illumination-dependence of the work function of gallium arsenideSurface Science, 1972
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967