Effects of dislocations on the noise of planar p–n junctions†

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Abstract
In this work edge dislocations are introduced by plastic deformation in silicon planar diodes. The effects of tho dislocations on tho electrical properties, especially noise are studied. Tho noise spectra for the diodes under forward bias conditions show that tho shot noiso is relatively unaffected by the dislocations, and tho I/F noise is only affected when the dislocations emerge at a surface near the junction. Tho most striking feature of the spectrum is the existence of a visible generation-recombination noise, which seems to be duo to fluctuations in the occupation of trapping centres in the space charge region introduced by the dislocations.