Formation of Through-Holes on Silicon Wafer by Optical Excitation Electropolishing Method
- 1 February 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (2R) , 378-386
- https://doi.org/10.1143/jjap.39.378
Abstract
Through-holes were formed by selective partial electropolishing in a 2.5 wt% HF electrolytic solution, using an N-type, (100)-oriented Si wafer as an anode, and a Pt plate as a cathode. The obtained holes were square through-holes of 5–35 µm side length, with an aspect ratio of 109. It was possible to form such through-holes with a density of 3,500 holes/mm2in specified areas. It was also confirmed that the pit of the square-based inverted pyramid structure could form deep capillaries. This suggests the possibility of forming microstructures such as pillars and tubes.Keywords
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