Hydrogen in silicon: State, reactivity and evolution after ion implantation
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 19-24
- https://doi.org/10.1016/0921-5107(89)90209-2
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Nonlinear phenomena in hydrogen implantation into (100) siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Structure of acceptor-hydrogen and donor-hydrogen complexes in silicon from uniaxial stress studiesPhysical Review B, 1988
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- Silicon amorphization during ion implantation as a thermal phenomenonPhysical Review B, 1987
- Displacement and recoil in ion implanted siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Collision cascades in siliconNuclear Instruments and Methods, 1980
- On the Nature of Fixed Oxide ChargeJournal of the Electrochemical Society, 1978
- A channeling investigation of proton and deuteron damage in germaniumRadiation Effects, 1975
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974