DXcenter: Crossover of deep and shallow states in Si-dopedAs
- 15 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (6) , 4320-4323
- https://doi.org/10.1103/physrevb.33.4320
Abstract
A new microscopic model for the origin of the DX center in Si-doped As is proposed based on discrete variational Xα cluster calculations. The calculated level structure shows that the antibonding state of Si, which lies in the conduction bands as a resonance state in the case of GaAs, shifts downwards into the energy gap upon distortion of the neighboring four As atoms in the case of As. The formation energy of this distorted configuration is estimated from the shift of the level of the antibonding state along with the Keating-model calculation for the lattice distortion energy. As a result, the distorted configuration is found to be stable in Si-doped As.
Keywords
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