Semiconducting Properties of InAsxSb1-x Films Prepared by Vacuum Evaporation
- 1 November 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (11)
- https://doi.org/10.1143/jjap.10.1653
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Semiconducting Properties of InSb–InAs AlloysJournal of Applied Physics, 1968
- Optical properties of InAsySb1−y layers prepared by thermal evaporationInfrared Physics, 1964