Mössbauer study of shallow and deep states of Sn inAs
- 15 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (3) , 1885-1892
- https://doi.org/10.1103/physrevb.38.1885
Abstract
Epitaxial layers of As (0≤x≤1) doped with tin have been grown by metal-organic vapor-phase epitaxy and characterized by Mössbauer spectroscopy and Hall measurements. The x=0 and x=1 samples yield Mössbauer spectra that are interpreted in terms of two Sn sites corresponding to substitutional shallow donors and clustered species, with the former site population clearly dominating. The x=0.3–0.4 samples yield significantly altered Mössbauer resonance with a new type of dominating site. This can be interpreted as due to the DX-center deep level with an electronic structure altered due to electron localization and a local distortion of cubic symmetry in accord with recent models.
Keywords
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