Structural Transformations and Defect Production in Ion Implanted Silicon: A Molecular Dynamics Simulation Study
- 27 March 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (13) , 2507-2510
- https://doi.org/10.1103/physrevlett.74.2507
Abstract
We have simulated collisions of 5 keV silicon atoms with a silicon substrate. At this energy the simulation provides an atomistic description of the evolution of the displacement cascade. We discuss the structural changes occurring as the cascade regions transform from crystalline to liquid to amorphous phases. We compare the structure of the amorphous material with that of rapidly quenched liquid silicon. We also discuss the time evolution of the stress, kinetic and potential energies, and atomic density. An assessment of defect production mechanisms is made.Keywords
This publication has 17 references indexed in Scilit:
- Comparison of MC and MD calculations of slowing down of ions with low energiesRadiation Effects and Defects in Solids, 1994
- Mechanisms of amorphization in ion implanted crystalline siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Defects production and annealing in self-implanted SiJournal of Applied Physics, 1991
- New model for damage accumulation in Si during self-ion irradiationApplied Physics Letters, 1989
- keV particle bombardment of semiconductors: A molecular-dynamics simulationPhysical Review B, 1989
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Preparation and melting of amorphous silicon by molecular-dynamics simulationsPhysical Review B, 1988
- Phase diagram of silicon by molecular dynamicsPhysical Review B, 1987
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- Models for computer simulation of complete IC fabrication processIEEE Journal of Solid-State Circuits, 1979