Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser
- 28 May 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (22) , 3391-3393
- https://doi.org/10.1063/1.1374484
Abstract
We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current–density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made.Keywords
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