Room temperature low-threshold CW operationof 1.23 µm GaAsSb VCSELs on GaAs substrates
- 30 March 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (7) , 637-638
- https://doi.org/10.1049/el:20000483
Abstract
Room temperature (RT) continuous-wave (CW) operation of vertical-cavity surface-emitting lasers (VCSELs) with GaAsSb quantum wells on GaAs substrates has been demonstrated. A 6 × 6 µm2 oxide-confined device exhibited RT-CW lasing with a threshold current of 0.7 mA at 1.23 µm, which is the longest reported wavelength of GaAs-based VCSELs yet reported.Keywords
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