Thermal Stress and Dislocation Density in Undercut GaAs on Si
- 1 February 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (2R) , 976
- https://doi.org/10.1143/jjap.33.976
Abstract
Thermal stress and dislocation density in undercut GaAs on Si(UCGAS) in which the GaAs/Si interface was partially eliminated by post-growth processing were investigated. Thermal stress of less than 2×108 dyn/cm2 was obtained in the area that is large enough for practical applications. The dislocation density was also reduced to less than 5×105 cm-2 by growing strained-layer superlattice (SLS) and GaAs layers on the UCGAS. The dislocation reduction was due to the fact that the UCGAS was free from the stress-induced dislocations during cooling after the growth. As a result, photoluminescence peak wavelength and peak intensity measured in the UCGAS have become almost the same as those in homoepitaxial GaAs.Keywords
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