Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology
- 30 September 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (9) , 1163-1168
- https://doi.org/10.1016/0038-1101(90)90095-v
Abstract
No abstract availableKeywords
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