GaAsSb and AlGaAsSb tunnel diodes
- 1 February 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2) , 1134-1135
- https://doi.org/10.1063/1.328816
Abstract
GaAsSb and AlGaAsSb tunnel diodes have been grown of material with 1.25–1.9 eV band gaps. High excess current values in all samples indicate a high number of defect levels in the forbidden gap.This publication has 6 references indexed in Scilit:
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