Rectification by resonant tunneling diodes
- 15 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 253-255
- https://doi.org/10.1063/1.102820
Abstract
The coefficient of rectification, arect(ω), for a resonant tunneling diode is obtained from an exact solution for the transmission probability T(ε) through an oscillating resonant level. The experimentally observed broadening and lowering of the peaks in arect(ω) with increasing frequency ω are explained by the increase in spacing between the sidebands in T(ε). Most important, arect(ω) is entirely determined by the dc current. Consequently, any mechanism which broadens the negative differential conductance region will cause a dc‐like coefficient of rectification to persist to frequencies higher than the inverse charge‐transport time.Keywords
This publication has 10 references indexed in Scilit:
- Inelastic scattering in resonant tunnelingPhysical Review B, 1989
- Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable ModelPhysical Review Letters, 1988
- Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theoryJournal of Applied Physics, 1988
- Picosecond switching time measurement of a resonant tunneling diodeApplied Physics Letters, 1988
- Theory of resonant tunneling in heterostructuresPhysical Review B, 1988
- Resonance tunneling in a periodic time-dependent external fieldPhysical Review B, 1988
- Quantum transport calculation of the small-signal response of a resonant tunneling diodeApplied Physics Letters, 1987
- Importance of space-charge effects in resonant tunneling devicesApplied Physics Letters, 1987
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983