Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructurelasers with nonabsorbingmirrors by selective-area MOCVD
- 22 June 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (13) , 1070-1072
- https://doi.org/10.1049/el:19950742
Abstract
Design, fabrication and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to ~325 mW/facet (4 µm wide output aperture), which is a > 40% increase over conventional SAE-BH lasers.Keywords
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