Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (2) , 441-445
- https://doi.org/10.1109/3.283791
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVDJournal of Electronic Materials, 1994
- High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by in situ etching and regrowthApplied Physics Letters, 1993
- Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVDIEEE Photonics Technology Letters, 1993
- A novel technique for low-threshold and high-power InGaAs/GaAs strained-layer 0.98-μm buried heterostructure laser fabricationJournal of Applied Physics, 1992
- Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasersElectronics Letters, 1992
- Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1992
- Antiguiding in narrow stripe gain-guided InGaAs-GaAs strained-layer lasersJournal of Applied Physics, 1991
- Submilliamp threshold InGaAs-GaAs strained layer quantum-well laserIEEE Journal of Quantum Electronics, 1990
- Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum well lasers (λ∼910 nm)Applied Physics Letters, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989