Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD
- 1 February 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (2) , 115-119
- https://doi.org/10.1007/bf02655256
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor depositionApplied Physics Letters, 1993
- Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasersJournal of Crystal Growth, 1992
- Extremely large band gap shifts for MQW structures by selective epitaxy on SiO/sub 2/ masked substratesIEEE Photonics Technology Letters, 1992
- DFB lasers with monolithically integrated passive waveguideIEEE Photonics Technology Letters, 1992
- High power continuous operation of laser diodes at 1064 nmElectronics Letters, 1991
- Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InPApplied Physics Letters, 1991
- Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAsJournal of Crystal Growth, 1991
- Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure –MOCVD Using Diethylgalliumchloride and DiethylaluminiumchlorideJapanese Journal of Applied Physics, 1990
- Metalorganic chemical vapor depositionCritical Reviews in Solid State and Materials Sciences, 1988
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985