Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasers
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 553-557
- https://doi.org/10.1016/0022-0248(92)90516-l
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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