Long-lived MOCVD-grown 780 nm SBA laser with reduced influence of regrowth interface
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1) , 814-819
- https://doi.org/10.1016/0022-0248(88)90624-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Improved Self-Aligned Structure for GaAlAs High-Power LasersJapanese Journal of Applied Physics, 1987
- AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowthIEEE Journal of Quantum Electronics, 1987
- Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor depositionJournal of Lightwave Technology, 1986
- Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrorsIEEE Journal of Quantum Electronics, 1984
- Photoluminescence measurements of Zn-doped Ga1−xAlxAs grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1983
- Highly reliable and mode-stabilized operation in v-channeled substrate inner stripe lasers on p-GaAs substrate emitting in the visible wavelength regionJournal of Applied Physics, 1982
- Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasersApplied Physics Letters, 1980
- Recombination enhanced annealing effect in AlGaAs/GaAs remote junction heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- Degradation mechanism of (Al · Ga)As double-heterostructure laser diodesApplied Physics Letters, 1974