Photoluminescence measurements of Zn-doped Ga1−xAlxAs grown by metalorganic chemical vapor deposition
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4536-4542
- https://doi.org/10.1063/1.332654
Abstract
We have investigated the photoluminescence properties of Zn‐doped Ga1−xAlxAs grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence spectra exhibit weak bound‐exciton lines, donor–acceptor pair transitions, free‐to‐bound excitons, and low energy broad bands. The Zn acceptor ionization energy is determined from the free‐to‐bound transitions as a function of aluminum concentration x up to 0.46. Two low energy bands have been observed in Zn‐doped Ga1−xAlxAs. One is at ∼1.65 eV and is identified as due to the ZnGa–VAs complex. Another band has been observed at ∼1.81 eV from samples with x near or beyond the crossover. It is well separated from the band edge, but its origin is not yet well understood.This publication has 30 references indexed in Scilit:
- Photoluminescence spectrum of p-type AlxGa1−xAs:GeJournal of Applied Physics, 1982
- Photoluminescence of Ge-doped AlxGa1−xAsJournal of Applied Physics, 1981
- Photoluminescence measurements in Ge-doped p-type Ga0.60Al0.40AsJournal of Applied Physics, 1981
- Photoluminescence of Ge-doped AlxGa1−xAs grown by liquid phase epitaxyJournal of Applied Physics, 1980
- C.W. operation of Al
x
Ga
1−
x
As/Al
y
Ga
1−
y
As lasers grown by metalorganic c.v.d. in wavelength range 760~780 nmElectronics Letters, 1980
- Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold currentElectronics Letters, 1979
- Continuous room-temperature operation of Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- NEAR-BAND-EDGE LUMINESCENCE IN GaAs:ZnApplied Physics Letters, 1968
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962