A novel technique for low-threshold and high-power InGaAs/GaAs strained-layer 0.98-μm buried heterostructure laser fabrication

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Abstract
A novel fabrication technique has been developed for InGaAs/GaAs strained‐layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high‐power operation for lasing wavelength of 9800±20 Å have been achieved with graded index separate confinement heterostructure devices using this novel technique.