53 GHz static frequency divider in a Si/SiGe bipolar technology
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- 66 GHz static frequency divider in transferred-substrate HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 2–46.5 GHz quasi-static 2:1 frequency dividerICusing InAlAs/InGaAs/InP HEMTsElectronics Letters, 1997
- Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/sIEEE Journal of Solid-State Circuits, 1996