Electron-phonon interaction in suspended highly doped silicon nanowires

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Abstract
We have realized highly doped suspended silicon nanowires with lateral dimensions down to 20 nm for studying electron transport and dissipation phenomena in these wires. Random dopant fluctuations lead to the formation of multiple tunnel junctions, showing Coulomb blockade phenomena at low drain-source bias. In the finite-bias regime we observe relaxation of hot electrons via phonons. Melting of the wires then occurs at high bias values at an extremely large current density of the order of 106 Ac m −2.