Uniaxial stress dependence of the « EL2 » and « EL3 » deep levels in bulk GaAs
Open Access
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (10) , 1517-1520
- https://doi.org/10.1051/rphysap:0198000150100151700
Abstract
We present uniaxial stress measurements performed on the activation energies of both the deep EL2 center in GaAs (820 meV), often called « O » center, and the EL3 electronic trap (600 meV). The EL2 level is found to separate from the conduction band at a rate of (1.1 + 0.6) meV/kbar for uniaxial stress in the (100) direction and (0.8 ± 0.5) meV/kbar for uniaxial stress in the (111) direction. Both values are consistent with the pressure coefficient reported under hydrostatic conditions. The second level (EL3) exhibits more important stress dependences : (1.8 ± 0.3) meV/kbar under (100) and (2.8 ± 0.4) meV/kbar under (111) compressions, respectivelyKeywords
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