The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling
- 1 January 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (1) , 179-183
- https://doi.org/10.1063/1.331728
Abstract
Numerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results (in conjunction with the experimental data) imply that during room-temperature electron irradiation of Si the indirect production of divacancies can be more important than the direct production of V2 via the single-collision process.This publication has 13 references indexed in Scilit:
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