Calculations of the electron mobility of InAsxP1−x
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 52 (9) , 1193-1195
- https://doi.org/10.1016/0022-3697(91)90054-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Alloy disorder scattering contribution to low-temperature electron mobility in semiconductor quantum well structuresJournal of Applied Physics, 1984
- Sub-threshold velocity-field characteristics of InAs1-xPx alloysPhysica Status Solidi (a), 1977
- Alloy scattering in ternary III-V compoundsPhysical Review B, 1976
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956
- Note on polar scattering of conduction electrons in regular crystalsPhysica, 1953
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950