Sub-threshold velocity-field characteristics of InAs1-xPx alloys
- 16 May 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 41 (1) , 85-94
- https://doi.org/10.1002/pssa.2210410108
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Velocity-field relationship of InAs-InP alloys including the effects of alloy scatteringApplied Physics Letters, 1976
- Galvanomagetic Properties in n-InAs at 77 KJournal of the Physics Society Japan, 1975
- Impact ionization in heavily doped n-InAs and n-InSbPhysica Status Solidi (a), 1972
- Optimum semiconductor for microwave devicesElectronics Letters, 1969
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Observation of multiple high-field domains in n-GaAsProceedings of the IEEE, 1968
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958
- Dielectric Breakdown in SolidsProceedings of the Physical Society. Section B, 1956