Galvanomagetic Properties in n-InAs at 77 K
- 15 May 1975
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 38 (5) , 1383-1388
- https://doi.org/10.1143/jpsj.38.1383
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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- Impact ionization in narrow gap semiconductorsPhysica Status Solidi (a), 1973
- Impact ionization in heavily doped n-InAs and n-InSbPhysica Status Solidi (a), 1972
- Electric Field Dependence of Galvanomagnetic Properties in-Type InSb at 77 °KPhysical Review B, 1971
- High-electric-field electron velocity in InSb in transverse and parallel magnetic fieldsProceedings of the IEEE, 1971
- Avalanche breakdown in n-type InAs at 77°KPhysics Letters A, 1969
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- Transport Phenomena in Indium Antimonide at Higher Electric FieldJournal of the Physics Society Japan, 1965
- Electron-Hole Scattering in Solids Exhibiting Band-Gap Impact IonizationJapanese Journal of Applied Physics, 1963
- Hot Electrons in Indium AntimonidePhysical Review B, 1963