Transport Phenomena in Indium Antimonide at Higher Electric Field
- 1 October 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (10) , 1814-1821
- https://doi.org/10.1143/jpsj.20.1814
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The Generation of Microwave Radiation from InSbJapanese Journal of Applied Physics, 1965
- Effect of Electron-Hole Scattering on Mobility in Indium Antimonide at High Electric FieldJournal of the Physics Society Japan, 1964
- Electron-Hole Scattering in Solids Exhibiting Band-Gap Impact IonizationJapanese Journal of Applied Physics, 1963
- Hot Electrons in Indium AntimonidePhysical Review B, 1963
- Electron-Hole Scattering at High Injection-Levels in GermaniumNature, 1962
- Collective Behavior in Solid-State PlasmasPhysical Review B, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- The Change in Electron Mobility in Indium Antimonide at Low Electric FieldJournal of the Physics Society Japan, 1960