Analysis of hot-carrier-induced degradation mode on pMOSFET's
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (6) , 1487-1495
- https://doi.org/10.1109/16.106244
Abstract
No abstract availableKeywords
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