Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration
- 9 February 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (6) , 719-721
- https://doi.org/10.1063/1.120856
Abstract
Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects.
Keywords
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