Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structures
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 257-259
- https://doi.org/10.1016/0022-0248(89)90396-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Migration of Si in δ-doped GaAsSemiconductor Science and Technology, 1988
- Slope resistance characteristics of GaAs-(Al,Ga)As-GaAs single barrier structuresApplied Physics Letters, 1988
- Silicon migration during MBE growth of doped (A1, Ga)As filmsApplied Physics A, 1986
- Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structuresApplied Physics Letters, 1985
- Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAsApplied Physics A, 1984