Silicon migration during MBE growth of doped (A1, Ga)As films
- 1 November 1986
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 41 (3) , 237-241
- https://doi.org/10.1007/bf00616845
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Observation of strong localization effects in (AlGa)As–GaAs two-dimensional electron gas structures at low magnetic fieldsJournal of Vacuum Science & Technology B, 1986
- Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structuresApplied Physics Letters, 1985
- Doping effects in AlGaAsJournal of Vacuum Science & Technology B, 1985
- Two-dimensional electron gas systems at semiconductor interfacesSurface Science, 1985
- Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructuresApplied Physics Letters, 1985
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)Japanese Journal of Applied Physics, 1984
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxyJournal of Applied Physics, 1982
- Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlatticesApplied Physics Letters, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981