The process and efficiency of ultraviolet generation from gallium nitride blue light emitting diodes
- 8 September 1997
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (10) , 1385-1387
- https://doi.org/10.1063/1.119901
Abstract
To obtain small size, high speed ultraviolet sources, we studied the ultraviolet (UV) generation process and efficiency of gallium nitride (GaN) blue light emitting diodes (LEDs). The blue and UV emissions follow a four-level recombination model. Depending on the pump pulse amplitude, the UV-to-blue generation ratio increases and then saturates with increasing pump pulse duration. High efficiency, up to 450 μW UV power at 380 nm, can be obtained from a 1.2 mW blue LED.Keywords
This publication has 5 references indexed in Scilit:
- Time-resolved-spectrum studies of GaN light emitting diodesApplied Physics Letters, 1996
- Phase Fluorometric Optical Carbon Dioxide Gas Sensor for Fermentation Off‐Gas MonitoringBiotechnology Progress, 1996
- A Light Emitting Diode Improves Evanescent Excitation of a Fiber Optic Cocaine BiosensorAnalytical Letters, 1996
- Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diodeApplied Physics Letters, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994