Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)
- 30 November 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (8) , 655-658
- https://doi.org/10.1016/0038-1098(79)90721-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Stress Effects on Electronic Properties of Silicon Inversion LayersJournal of the Physics Society Japan, 1978
- Many-valley interactions in-type silicon inversion layersPhysical Review B, 1978
- Surface cyclotron resonance in Si under uniaxial stressSolid State Communications, 1976
- Cyclotron resonance of electrons in surface space-charge layers on siliconPhysical Review B, 1976
- Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in SiPhysical Review Letters, 1975
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966