Epitaxial Growth of CdTe on GaAs(100) by RF Sputtering

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Abstract
Cadmium telluride is deposited by rf sputtering on the clean surface of GaAs(100) substrates from which the surface native oxides have been etched off in advance by H2 plasma treatment. RHEED patterns of CdTe films prepared at 270°C on GaAs pretreated with H2 plasma at 120°C are streaked with (100) characteristics, which shows that the deposited layers are grown epitaxially. The crystalline quality of the CdTe films, which depends on the substrate temperature, is evaluated by means of the optical reflectance. The peak height of the second-derivative reflectance spectra, which is a measure of the crystalline quality, steeply increases at deposition temperatures of 220∼270°C. Thus a deposition temperatures of more than 270°C is needed for high crystalline quality.