The properties and applications of the Hg1−xCdxTe alloy system
- 1 January 1983
- book chapter
- Published by Springer Nature
- p. 119-281
- https://doi.org/10.1007/bfb0044921
Abstract
No abstract availableKeywords
This publication has 484 references indexed in Scilit:
- Magnetoconcentration effect at Auger recombination of current carriersPhysica Status Solidi (a), 1981
- Propriétés électriques des couches épitaxiées de Hg1–xCdxTe dans la gamme 4,2 à 300 KPhysica Status Solidi (a), 1980
- On narrow-gap electron spectra of semiconductors. two-band model with electron-phonon interactionTheoretical and Mathematical Physics, 1978
- The disorder scattering in zincblende narrow-gap semiconducting mixed crystalsPhysica Status Solidi (b), 1978
- Contribution of the lattice dilatation to the temperature shift of the energy gap of Cdx Hg1−x TePhysica Status Solidi (a), 1978
- Electrical transport properties of epitaxial graded-GaP CdxHg1—xTe layersPhysica Status Solidi (a), 1977
- Magnetooptical Investigation of Hg1−xCdxTe Mixed Crystals. I. Semimetallic ConfigurationPhysica Status Solidi (b), 1977
- Magnetism of CdTe lattice defectsPhysica Status Solidi (a), 1972
- Galvanomagnetic Properties of HgTe in High Magnetic FieldPhysica Status Solidi (b), 1972
- Heavy Hole Effective Mass of Cd0.1Hg0.9TePhysica Status Solidi (b), 1967