Propriétés électriques des couches épitaxiées de Hg1–xCdxTe dans la gamme 4,2 à 300 K
- 16 March 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 58 (1) , 135-141
- https://doi.org/10.1002/pssa.2210580116
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Electron Mobility in Hg1−xCdxTeJournal of Applied Physics, 1972
- Helicons and Nonresonant Cyclotron Absorption in Semiconductors. II.Physical Review B, 1969
- Croissance épitaxique de composés semiconducteurs par évaporation-diffusion en régime isothermeRevue de Physique Appliquée, 1966
- Photon Effects in Hg_1−x Cdx TeApplied Optics, 1965