A criterion for determining the switching voltage of a metal-thin insulator-Si(n)-Si(p+) device
- 1 January 1979
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 14 (11) , 921-925
- https://doi.org/10.1051/rphysap:019790014011092100
Abstract
A new switching criterion for Metal-Insulator-Si(n)-Si(p+) structures based on the MIS diode capacity is given within the framework of a simple electrostatic model. The values of the switching voltage and its dependence on temperature, together with the switching current are calculated on the basis of analytical expressions. These values are in accordance with experimental dataKeywords
This publication has 4 references indexed in Scilit:
- The characterisation of metal-thin insulator-n-p+ silicon switching devicesRevue de Physique Appliquée, 1978
- Thickness dependence of the dielectric constant and resistance of Al2O3 filmsJournal of Applied Physics, 1977
- Silicon p−n insulator-metal (p-n-I-M) devicesSolid-State Electronics, 1976
- Thin-MIS-Structure Si Negative-Resistance DiodeApplied Physics Letters, 1972