Suppression of bandgap shifts inGaAs/AlGaAs multiquantum wellsusing hydrogen plasma processing
- 3 August 1995
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (16) , 1393-1394
- https://doi.org/10.1049/el:19950911
Abstract
A new method of suppressing the intermixing of GaAs/AlGaAs multiple quantum wells is outlined. The technique involves modifying the native surface oxide of gallium arsenide in a hydrogen plasma to form Ga2O3. The technique is impurity free, reproducible and area selective.Keywords
This publication has 5 references indexed in Scilit:
- Integration process for photonic integrated circuitsusing plasmadamage induced layer intermixingElectronics Letters, 1995
- GaAs surface modification by room-temperature hydrogen plasma passivationApplied Physics Letters, 1992
- Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmasApplied Physics Letters, 1992
- XPS investigation of the interaction between ECR-excited hydrogen and the native oxide of GaAs (100)Vacuum, 1992
- Out-diffusion of Ga and As atoms into dielectric films in SiOx /GaAs and SiNy/GaAs systemsJournal of Applied Physics, 1989