Out-diffusion of Ga and As atoms into dielectric films in SiOx /GaAs and SiNy/GaAs systems

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Abstract
Residual Ga and As atoms in SiOx and SiNy dielectric films deposited on GaAs were investigated by Rutherford backscattering spectroscopy and particle‐induced x‐ray emission techniques. Both Ga and As atoms were detected in the films after high temperature heat treatment, and even in the films as‐deposited. The magnitude of the residual atoms presumably out‐diffused from GaAs substrates was of the order of 1×1019 /cm3. The concentration of Ga atoms prevails over that of As atoms in SiOx/GaAs systems as is generally known, and vice versa in SiNy/GaAs systems after heat treatment. Dynamic behavior of Ga and As atoms in the films as functions of annealing temperature and annealing time cannot be explained by a simple diffusion mechanism. A model is proposed that the damaged layer around the interface of the systems is responsible for the anomalous out‐diffusion phenomena.