Structural and Electrical Properies of Photo-CVD Silicon Nitride Film

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Abstract
Silicon nitride film was deposited by mercury-sensitized photochemical vapor deposition (photo-CVD) utilizing a gaseous mixture of SiH4 and NH3 under 253.7 nm ultraviolet light irradiation. The structural and electrical properties of the film were then evaluated with emphasis on the substrate temperature dependence. The film contains a considerable amount of hydrogen, and less dense than silicon nitride film deposited by high-temperature chemical vapor deposition. The structural properties of photo-CVD silicon nitride film are basically similar to those of silicon nitride film deposited by plasma-enhanced chemical vapor deposition (P-CVD). However, the film has better insulating properties than P-CVD film, with a smaller leakage current, a higher breakdown field and a smaller positive charge density within the film.

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