Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
- 1 April 2005
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 276 (3-4) , 415-418
- https://doi.org/10.1016/j.jcrysgro.2004.12.003
Abstract
No abstract availableKeywords
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