GaN-based optoelectronics on silicon substrates

This publication has 50 references indexed in Scilit:

• Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
  Applied Physics Letters, 2001
• Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
  Japanese Journal of Applied Physics, 2000
• Direct evidence of tensile strain in wurtzite structuren−GaNlayers grown onn−Si(111)using AlN buffer layers
  Physical Review B, 1999
• Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates
  Applied Physics Letters, 1997
• Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
  Applied Physics Letters, 1996
• Thermal stress in GaN epitaxial layers grown on sapphire substrates
  Journal of Applied Physics, 1995
• MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures
  MRS Proceedings, 1995
• Overcoming the pseudomorphic critical thickness limit using compliant substrates
  Applied Physics Letters, 1994
• Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
  Japanese Journal of Applied Physics, 1981
• The deposition of group III nitrides on silicon substrates
  Thin Solid Films, 1979