Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells
- 4 September 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (10) , 933-935
- https://doi.org/10.1063/1.101728
Abstract
We have performed picosecond time‐resolved measurements on In0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.Keywords
This publication has 10 references indexed in Scilit:
- Excitonic lifetimes in thinAs/InP quantum wellsPhysical Review B, 1989
- Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InPApplied Physics Letters, 1989
- Trapping of carriers in single quantum wells with different configurations of the confinement layersPhysical Review B, 1988
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Direct and indirect carrier capture by semiconductor quantum wellsSuperlattices and Microstructures, 1987
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well StructureJapanese Journal of Applied Physics, 1985
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Interband magnetoabsorption of In_{0.53}Ga_{0.47}AsPhysical Review B, 1980