Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 739-741
- https://doi.org/10.1063/1.100878
Abstract
We report measurements of the conduction‐band offset in strained‐layer superlattices of InxGa1−xAs/InP. Admittance spectroscopy was used to measure the activation energy for thermionic emission of electrons over InP barriers in n‐type superlattices. Superlattice dimensions and x values were obtained from high‐resolution x‐ray diffraction and transmission electron microscopy studies. For x=0.37, 0.53, and 0.69, the values obtained for the conduction‐band offset are 175±25 meV, 210±20 meV, and 315±25 meV, respectively.Keywords
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