Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
- 15 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (12) , 6680-6685
- https://doi.org/10.1063/1.369044
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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